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Title: Scour protection downstream of Morganza Control Structure, Morganza, Louisiana
Authors: United States. Army. Corps of Engineers. New Orleans District.
Maynord, Stephen T.
Keywords: Discharge coefficient
Mississippi River
Morganza Control Structure
Hydraulic structures
Stilling basin
2011 Mississippi River flood
Flood control
Vertical gate
Issue Date: Mar-2014
Publisher: Coastal and Hydraulics Laboratory (U.S.)
Engineer Research and Development Center (U.S.)
Series/Report no.: ERDC/CHL TR ; 14-1.
Description: Technical Report
Abstract: The Morganza Control Structure (MCS) experienced scour downstream of the structure during the two times it has been opened, 1973 and 2011. The MCS study reported herein was conducted to develop scour prevention measures downstream of the structure. The primary problems leading to scour at the MCS are (1) low tailwater, (2) increased headwater since the structure was built, and (3) the need for only a few of the 125 gates to pass most floods (those needed must be either fully open or closed). The study used a 1:22 scale physical hydraulic model of the upstream approach, a 10-gate-wide portion of the spillway and stilling basin, and the exit channel. The model initially was configured to simulate a 10-gate-bay width of the middle third of the structure having a concrete plunge pool downstream of the stilling basin. The model was reconfigured to simulate a 10-gate-bay width of the two outer thirds of the structure having only the stilling basin. Discharge rating plots and equations were developed for the structure. The plan of scour protection developed for the portion of the structure having a plunge pool is large stone protection downstream of the plunge pool. The plan of scour protection developed for the portion of the structure not having the plunge pool will be an operational change and stone protection downstream of the existing ungrouted derrick stone. Analysis of the structure by the sponsor showed that the upper gate leaf can be left in place to reduce the discharge and thus scour potential of each gate.
Appears in Collections:Technical Report

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